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This information HAS errors and is made available WITHOUT ANY WARRANTY OF ANY KIND and without even the implied warranty of MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. It is not permissible to be read by anyone who has ever met a lawyer or attorney. Use is confined to Engineers with more than 370 course hours of engineering.

Qucs

Quite Universal Circuit Simulator is an integrated circuit simulator. It enables you to setup a circuit with a graphical user interface (GUI) and simulate the large-signal, small-signal and noise behavior of the circuit. After the simulation has finished you can add and view the simulation results along with the circuit schematic or on a presentation page.

The GUI has backends - Ngspice, Xyce, SPICE OPUS, Spice4qucs. Spice4qucs is built-in. Ngspice and Xyce simulators are not embedded in Qucs but operate as independent external simulators.

Spice notes

qucs has several BJT:

• SGP SGP(SPICE Gummel-Poon(1970) (based on the 1954 Ebers-moll)
• FBH-HBT -Heterojunction Bipolar Transistor the design of monolithic integrated microwave circuits (MMICs) in GaAs-HBTs. It is, however, versatile enough to also describe InP-based HBTs.
• HICUM L0 v1.12 (verilog device)- HICUM stands for HIgh CUrrent Model and targets the design of bipolar transistor circuits at high-frequencies and high-current densities using Si, SiGe or III-V based processes. https://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_intro.html

HICUM L0 v1.2

HICUM L2 v2.1

HICUM L2 v2.22

HICUM L2 v2.23

• MESFET (Curtice, Statz, TOM-1 and TOM-2)
• MOSFET BSIM series. - MOSFET http://www-device.eecs.berkeley.edu/bsim/?page=BSIM3
• JFET
• EPFL-EKV MOSFET v2.6.
• MEXTRAM Most EXquisite TRAnsistor Model (1994) a compact BJT model for high frequencies circuits in Si and SiGe .
• VBIC Vertical Bipolar Inter-Company (1996) BJT model that was developed as a public domain replacement for the SPICE Gummel-Poon (SGP) model

Improved Early effect modeling

Quasi-saturation modeling

Parasitic substrate transistor modeling

Parasitic fixed (oxide) capacitance modeling

Includes an avalanche multiplication model

Improved temperature modeling

Base current is decoupled from collector current

Electrothermal modeling

Smooth, continuous model

• EPFL-EKV MOSFET

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