Disclaimer
This information HAS errors and is made available WITHOUT ANY WARRANTY OF ANY KIND and without even the implied warranty of MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. It is not permissible to be read by anyone who has ever met a lawyer or attorney. Use is confined to Engineers with more than 370 course hours of engineering.
Qucs
Quite Universal Circuit Simulator
is an integrated circuit simulator. It enables you to setup a circuit
with a graphical user interface (GUI) and simulate the large-signal,
small-signal and noise behavior of the circuit. After the simulation has
finished you can add and view the simulation results along with the
circuit schematic or on a presentation page.
The GUI has backends - Ngspice, Xyce, SPICE OPUS, Spice4qucs.
Spice4qucs is built-in. Ngspice and Xyce simulators are not embedded in
Qucs but operate as independent external simulators.
Spice notes
qucs has several BJT:
- SGP SGP(SPICE Gummel-Poon(1970) (based on the 1954 Ebers-moll)
- FBH-HBT -Heterojunction Bipolar Transistor
the design of monolithic integrated microwave circuits (MMICs) in
GaAs-HBTs. It is, however, versatile enough to also describe InP-based
HBTs.
- HICUM L0 v1.12 (verilog device)- HICUM stands for HIgh CUrrent Model
and targets the design of bipolar transistor circuits at
high-frequencies and high-current densities using Si, SiGe or III-V
based processes. https://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_intro.html
- HICUM L0 v1.2
- HICUM L2 v2.1
- HICUM L2 v2.22
- HICUM L2 v2.23
- MESFET (Curtice, Statz, TOM-1 and TOM-2)
- MOSFET BSIM series. - MOSFET http://www-device.eecs.berkeley.edu/bsim/?page=BSIM3
- JFET
- EPFL-EKV MOSFET v2.6.
- MEXTRAM Most EXquisite TRAnsistor Model (1994) a compact BJT model for high frequencies circuits in Si and SiGe .
- VBIC Vertical Bipolar Inter-Company (1996) BJT model that was developed as a public domain replacement for the SPICE Gummel-Poon (SGP) model
- Improved Early effect modeling
- Quasi-saturation modeling
- Parasitic substrate transistor modeling
- Parasitic fixed (oxide) capacitance modeling
- Includes an avalanche multiplication model
- Improved temperature modeling
- Base current is decoupled from collector current
- Electrothermal modeling
- Smooth, continuous model
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